1/2 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.g 2sb1260 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 + 0.2 + 0.1 + 0.2 (3)(2)(1) 4.0 1.00.2 0.50.1 2.5 3.00.2 1.50.1 1.50.1 0.40.1 0.50.1 0.40.1 0.4 1.5 4.5 1.60.1 0.3 (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sb1181 + 0.2 + 0.2 + 0.3 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 power transistor ( ? 80v, ? 1a) 2sb1260 / 2sb1181 ? features ? dimensions (unit : mm) 1) hight breakdown voltage and high current. bv ceo = ? 80v, i c = ? 1a 2) good h fe linearty. 3) low v ce(sat) . 4) complements the 2sd1898 / 2sd1733. ? structure epitaxial planar type pnp silicon transistor ? absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 2sb1260 : pw=20ms duty=1/2 ? 2 2sb1260 : when mounted on a 40 40 0.7 mm ceramic board. parameter v cbo v ceo v ebo i c p c tj tstg ?80 v v v a (dc) w c c ?80 ?5 ?1 i cp a (pulse) ?2 ?1 0.5 2 ?2 1 10 2sb1260 2sb1181 2sb1181 150 ?55 to +150 symbol limits unit w (tc=25 c ) ? electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) cob min. ?80 ?80 ?5 ? ? 120 2sb1181 2sb1181 2sb1260 ? ? ? ? ? ? ? ? ? ? 100 25 ? ? ? ?1 ?1 390 ?0.4 ? ? vi c = ?50 a i c = ?1ma i e = ?50 a v cb = ?60v v eb = ?4v v ce = ?3v, i c = ?0.1a i c /i b = ?500ma/ ?50ma v ce = ?10v, i e =50ma, f=100mhz v cb = ?10v i e =0a f=1mhz v v a a ? v mhz f t pf ? 20 ? pf typ. max. unit conditions
2/2 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.g data sheet 2sb1260 / 2sb1181 ? packaging specifications and h fe package code taping basic ordering unit (pieces) 2500 1000 ? qr h fe 2sb1260 tl qr 2sb1181 ? t100 type h fe values are classified as follows : item h fe q 120 to 270 r 180 to 390 ? electrical characteristic curves fig.1 grounded emitter propagation characteristics 0 ?0.1 ?1 ?100 ?1000 base to emitter voltage : v be (v) collector current : i c (ma) ?0.8 ?1.2 ?1.6 ?10 ?0.2 ?0.4 ?1.0 ?1.4 ?0.6 ta = 25c v ce = ?5v fig.2 grounded emitter output characteristics 0 0 ?0.2 ?0.8 ?1.0 ?0.4 ?0.8 ?1.2 ?1.6 ?0.4 ?0.6 ?2.0 ?0.2 ?0.6 ?1.0 ?1.4 ?1.8 collector current : i c (a) collector to emitter voltage : v ce (v) ta=25c ?0.5ma i b =0ma ?1ma ?1.5ma ?2ma ?2.5ma ?3ma ?3.5ma ?4ma ?4.5ma fig.3 dc current gain vs. collector current ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 200 0 collector current : i c (ma) 10 dc current gain : h fe ? 1000 20 50 100 200 500 1000 v ce = ?3v ?1v ta=25c fig.4 collector-emitter saturation voltage vs. collector current ?0.01 ?0.02 ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?2 ta=25c i c /i b =20 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 200 0 ? 1000 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 10 fig.5 gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 emitter current : i e (ma) transition frequency : f t (mhz) ta = 25c v ce = ?5v fig.6 collector output capacitance vs. collector-base voltage -0.2 ?0.1 ? 0.5 -1 ?2 ?5 ?10 ?20 ?50 ?100 1 2 5 10 20 50 100 200 500 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) collector to base voltage : v cb (v)
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